K4F2E3S4HM-MHCJ - 12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

Nombor Bahagian pengilang

Nombor Bahagian dalaman

pengeluar

Penerangan ringkas

12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

116095 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai K4F2E3S4HM-MHCJ dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : K4F2E3S4HM-MHCJ

pengeluar : Samsung Semiconductor

Penerangan : 12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

Siri : DDR3

Ketumpatan : 12 Gb

Org. : x32

kelajuan : 3733 Mbps

voltan : 1.8 / 1.1 / 1.1 V

Temp. : -40 ~ 105 °C

pakej : 200FBGA

Status produk : Mass Production

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : K4F2E , K4F2E3S

Helaian data : K4F2E3S4HM-MHCJ.pdf

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BZ114096WZ10238BK1	Vishay Beyschlag	CAP CER 1000PF 40KV AXIAL.
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FPE210WV15236BJ1	Vishay Beyschlag	CAP CER 1500PF 30KV R85 AXIAL.
CDR31BP100BJZRAB	Vishay Vitramon	CAP CER 10PF 100V BP 0805.
WX110250WJ47238BJ1	Vishay Beyschlag	CAP CER 4700PF 14KV SCREW.
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