SI7100DN-T1-E3 - MOSFET N-CH 8V 35A 1212-8

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N-CH 8V 35A 1212-8
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
4552 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SI7100DN-T1-E3 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi SI7100DN-T1-E3

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : SI7100DN-T1-E3
pengeluar : Vishay Siliconix
Penerangan : MOSFET N-CH 8V 35A 1212-8
Siri : TrenchFET®
Status Bahagian : Obsolete
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 8V
Semasa - Saliran berterusan (Id) @ 25 ° C : 35A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 3.5 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 105nC @ 8V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 3810pF @ 4V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 3.8W (Ta), 52W (Tc)
Suhu Operasi : -50°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : PowerPAK® 1212-8
Pakej / Kes : PowerPAK® 1212-8
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : SI71 , SI7100D

dokumen untuk SI7100DN-T1-E3

Helaian data : SI7100DN-T1-E3.pdf

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