1N6479HE3/97 - DIODE GEN PURP 100V 1A DO213AB

Nombor Bahagian pengilang

1N6479HE3/97

Nombor Bahagian dalaman

AX-1N6479HE3/97

pengeluar

Vishay Semiconductor Diodes Division

Penerangan ringkas

DIODE GEN PURP 100V 1A DO213AB

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

3523250 Pieces

Harga rujukan

~~USD 0.079632~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai 1N6479HE3/97 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi 1N6479HE3/97

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : 1N6479HE3/97

pengeluar : Vishay Semiconductor Diodes Division

Penerangan : DIODE GEN PURP 100V 1A DO213AB

Siri : SUPERECTIFIER®

Status Bahagian : Active

Jenis Diod : Standard

Voltan - DC Reverse (Vr) (Max) : 100V

Semasa - Purata Rectified (Io) : 1A

Voltan - Teruskan (Vf) (Max) @ Jika : 1.1V @ 1A

Kelajuan : Standard Recovery >500ns, > 200mA (Io)

Masa Pemulihan Songsang (trr) : -

Semasa - Kebocoran Songsang @ Vr : 10µA @ 100V

Kapasiti @ Vr, F : 8pF @ 4V, 1MHz

Jenis Pemasangan : Surface Mount

Pakej / Kes : DO-213AB, MELF (Glass)

Pakej Peranti Pembekal : DO-213AB

Suhu Pengoperasian - Persimpangan : -65°C ~ 175°C

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : 1N64 , 1N6479

dokumen untuk 1N6479HE3/97

Helaian data : 1N6479HE3/97.pdf

produk berkaitan untuk 1N6479HE3/97 Vishay Semiconductor Diodes Division

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