DMJ70H900HJ3 - MOSFET BVDSS 651V 800V TO251
Nombor Bahagian pengilang
Nombor Bahagian dalaman
AX-DMJ70H900HJ3
pengeluar
Penerangan ringkas
MOSFET BVDSS 651V 800V TO251
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
323020 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai DMJ70H900HJ3 dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi DMJ70H900HJ3
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
DMJ70H900HJ3
pengeluar :
Diodes Incorporated
Penerangan :
MOSFET BVDSS 651V 800V TO251
Siri :
Automotive, AEC-Q101
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
700V
Semasa - Saliran berterusan (Id) @ 25 ° C :
7A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
18.4nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
603pF @ 50V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
68W (Tc)
Suhu Operasi :
-55°C ~ 150°C (TJ)
Jenis Pemasangan :
Through Hole
Pakej Peranti Pembekal :
TO-251
Pakej / Kes :
TO-251-3, IPak, Short Leads
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk DMJ70H900HJ3
Helaian data :
DMJ70H900HJ3.pdf
produk berkaitan untuk DMJ70H900HJ3 Diodes Incorporated
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