DMJ70H900HJ3 - MOSFET BVDSS 651V 800V TO251

Nombor Bahagian pengilang

DMJ70H900HJ3

Nombor Bahagian dalaman

AX-DMJ70H900HJ3

pengeluar

Diodes Incorporated

Penerangan ringkas

MOSFET BVDSS 651V 800V TO251

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

323020 Pieces

Harga rujukan

~~USD 0.86856~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai DMJ70H900HJ3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi DMJ70H900HJ3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : DMJ70H900HJ3

pengeluar : Diodes Incorporated

Penerangan : MOSFET BVDSS 651V 800V TO251

Siri : Automotive, AEC-Q101

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 700V

Semasa - Saliran berterusan (Id) @ 25 ° C : 7A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 900 mOhm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 18.4nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 603pF @ 50V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 68W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Through Hole

Pakej Peranti Pembekal : TO-251

Pakej / Kes : TO-251-3, IPak, Short Leads

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : DMJ7 , DMJ70H

dokumen untuk DMJ70H900HJ3

Helaian data : DMJ70H900HJ3.pdf

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