SI4936BDY-T1-GE3 - MOSFET 2N-CH 30V 6.9A 8-SOIC
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET 2N-CH 30V 6.9A 8-SOIC
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
750325 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai SI4936BDY-T1-GE3 dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi SI4936BDY-T1-GE3
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
SI4936BDY-T1-GE3
pengeluar :
Vishay Siliconix
Penerangan :
MOSFET 2N-CH 30V 6.9A 8-SOIC
Siri :
TrenchFET®
Status Bahagian :
Active
Jenis FET :
2 N-Channel (Dual)
Ciri FET :
Logic Level Gate
Salurkan ke Voltan Sumber (Vdss) :
30V
Semasa - Saliran berterusan (Id) @ 25 ° C :
6.9A
Rds On (Max) @ Id, Vgs :
35 mOhm @ 5.9A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
530pF @ 15V
Kuasa - Maks :
2.8W
Suhu Operasi :
-55°C ~ 150°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej / Kes :
8-SOIC (0.154", 3.90mm Width)
Pakej Peranti Pembekal :
8-SO
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk SI4936BDY-T1-GE3
Helaian data :
SI4936BDY-T1-GE3.pdf
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