BSC010N04LSTATMA1 - DIFFERENTIATED MOSFETS

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
DIFFERENTIATED MOSFETS
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
347420 Pieces
Harga rujukan
USD 0.80754
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai BSC010N04LSTATMA1 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi BSC010N04LSTATMA1

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : BSC010N04LSTATMA1
pengeluar : Infineon Technologies
Penerangan : DIFFERENTIATED MOSFETS
Siri : OptiMOS™
Status Bahagian : Active
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 40V
Semasa - Saliran berterusan (Id) @ 25 ° C : 39A (Ta), 100A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 133nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9520pF @ 20V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 3W (Ta), 167W (Tc)
Suhu Operasi : -55°C ~ 175°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : PG-TDSON-8 FL
Pakej / Kes : 8-PowerTDFN
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : BSC01 , BSC010N0

dokumen untuk BSC010N04LSTATMA1

Helaian data : BSC010N04LSTATMA1.pdf

produk berkaitan untuk BSC010N04LSTATMA1 Infineon Technologies

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