TC58BYG0S3HBAI6 - IC FLASH 1G PARALLEL 67VFBGA
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
IC FLASH 1G PARALLEL 67VFBGA
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
161965 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai TC58BYG0S3HBAI6 dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi TC58BYG0S3HBAI6
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
TC58BYG0S3HBAI6
pengeluar :
Toshiba Memory America, Inc.
Penerangan :
IC FLASH 1G PARALLEL 67VFBGA
Siri :
Benand™
Status Bahagian :
Active
Jenis Memori :
Non-Volatile
Format Memori :
FLASH
Teknologi :
FLASH - NAND (SLC)
Saiz Memori :
1Gb (128M x 8)
Frekuensi Jam :
-
Tulis Masa Kitar - Kata, Halaman :
25ns
Masa Capaian :
25ns
Antara Muka Memori :
Parallel
Voltan - Bekalan :
1.7V ~ 1.95V
Suhu Operasi :
-40°C ~ 85°C (TA)
Jenis Pemasangan :
Surface Mount
Pakej / Kes :
67-VFBGA
Pakej Peranti Pembekal :
67-VFBGA (6.5x8)
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk TC58BYG0S3HBAI6
Helaian data :
TC58BYG0S3HBAI6.pdf
produk berkaitan untuk TC58BYG0S3HBAI6 Toshiba Memory America, Inc.
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