MT47H512M4EB-25E:C TR - IC DRAM 2G PARALLEL 60FBGA
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
IC DRAM 2G PARALLEL 60FBGA
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
51330 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai MT47H512M4EB-25E:C TR dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi MT47H512M4EB-25E:C TR
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
MT47H512M4EB-25E:C TR
pengeluar :
Micron Technology Inc.
Penerangan :
IC DRAM 2G PARALLEL 60FBGA
Siri :
-
Status Bahagian :
Obsolete
Jenis Memori :
Volatile
Format Memori :
DRAM
Teknologi :
SDRAM - DDR2
Saiz Memori :
2Gb (512M x 4)
Frekuensi Jam :
400MHz
Tulis Masa Kitar - Kata, Halaman :
15ns
Masa Capaian :
400ps
Antara Muka Memori :
Parallel
Voltan - Bekalan :
1.7V ~ 1.9V
Suhu Operasi :
0°C ~ 85°C (TC)
Jenis Pemasangan :
Surface Mount
Pakej / Kes :
60-TFBGA
Pakej Peranti Pembekal :
60-FBGA (9x11.5)
Berat :
-
Keadaan :
Baru dan asli
Pautan Berkaitan :
MT47H51 , MT47H512M4
dokumen untuk MT47H512M4EB-25E:C TR
Helaian data :
MT47H512M4EB-25E:C TR.pdf
produk berkaitan untuk MT47H512M4EB-25E:C TR Micron Technology Inc.
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CAP CER 6000PF 20KV R230 DISK. |
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CAP CER 5000PF 20KV. |
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