RQ3E070BNTB - MOSFET N-CH 30V 7A HSMT8

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N-CH 30V 7A HSMT8
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
4723300 Pieces
Harga rujukan
USD 0.0594
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai RQ3E070BNTB dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi RQ3E070BNTB

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : RQ3E070BNTB
pengeluar : Rohm Semiconductor
Penerangan : MOSFET N-CH 30V 7A HSMT8
Siri : -
Status Bahagian : Active
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 30V
Semasa - Saliran berterusan (Id) @ 25 ° C : 7A (Ta)
Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 27 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Caj Gate (Qg) (Max) @ Vgs : 8.9nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 410pF @ 15V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 2W (Ta)
Suhu Operasi : 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : 8-HSMT (3.2x3)
Pakej / Kes : 8-PowerVDFN
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : RQ3 , RQ3E0

dokumen untuk RQ3E070BNTB

Helaian data : RQ3E070BNTB.pdf

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