SI1965DH-T1-GE3 - MOSFET 2P-CH 12V 1.3A SC70-6

Nombor Bahagian pengilang

SI1965DH-T1-GE3

Nombor Bahagian dalaman

AX-SI1965DH-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET 2P-CH 12V 1.3A SC70-6

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

2355105 Pieces

Harga rujukan

~~USD 0.11913~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SI1965DH-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI1965DH-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI1965DH-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET 2P-CH 12V 1.3A SC70-6

Siri : TrenchFET®

Status Bahagian : Active

Jenis FET : 2 P-Channel (Dual)

Ciri FET : Logic Level Gate

Salurkan ke Voltan Sumber (Vdss) : 12V

Semasa - Saliran berterusan (Id) @ 25 ° C : 1.3A

Rds On (Max) @ Id, Vgs : 390 mOhm @ 1A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 4.2nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds : 120pF @ 6V

Kuasa - Maks : 1.25W

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 6-TSSOP, SC-88, SOT-363

Pakej Peranti Pembekal : SC-70-6 (SOT-363)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI196 , SI1965D

dokumen untuk SI1965DH-T1-GE3

Helaian data : SI1965DH-T1-GE3.pdf

produk berkaitan untuk SI1965DH-T1-GE3 Vishay Siliconix

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