GT60N321(Q) - IGBT 1000V 60A 170W TO3P LH

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
IGBT 1000V 60A 170W TO3P LH
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
56610 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai GT60N321(Q) dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi GT60N321(Q)

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : GT60N321(Q)
pengeluar : Toshiba Semiconductor and Storage
Penerangan : IGBT 1000V 60A 170W TO3P LH
Siri : -
Status Bahagian : Obsolete
Jenis IGBT : -
Voltage - Breaker Pemungut Pemungut (Max) : 1000V
Pemungut Semasa (Ic) (Maks) : 60A
Pengumpul Semasa - Pulsed (Icm) : 120A
Vce (pada) (Maks) @ Vge, Ic : 2.8V @ 15V, 60A
Kuasa - Maks : 170W
Menukar Tenaga : -
Jenis Input : Standard
Caj Gate : -
Td (hidup / mati) @ 25 ° C : 330ns/700ns
Keadaan ujian : -
Masa Pemulihan Songsang (trr) : 2.5µs
Suhu Operasi : 150°C (TJ)
Jenis Pemasangan : Through Hole
Pakej / Kes : TO-3PL
Pakej Peranti Pembekal : TO-3P(LH)
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : GT6 , GT60N

dokumen untuk GT60N321(Q)

Helaian data : GT60N321(Q).pdf

produk berkaitan untuk GT60N321(Q) Toshiba Semiconductor and Storage

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