IRFD110PBF - MOSFET N-CH 100V 1A 4-DIP
Nombor Bahagian pengilang
Nombor Bahagian dalaman
AX-IRFD110PBF
pengeluar
Penerangan ringkas
MOSFET N-CH 100V 1A 4-DIP
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
502800 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai IRFD110PBF dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi IRFD110PBF
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
IRFD110PBF
pengeluar :
Vishay Siliconix
Penerangan :
MOSFET N-CH 100V 1A 4-DIP
Siri :
-
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
100V
Semasa - Saliran berterusan (Id) @ 25 ° C :
1A (Ta)
Voltan Drive (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
540 mOhm @ 600mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
8.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 25V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
1.3W (Ta)
Suhu Operasi :
-55°C ~ 175°C (TJ)
Jenis Pemasangan :
Through Hole
Pakej Peranti Pembekal :
4-DIP, Hexdip, HVMDIP
Pakej / Kes :
4-DIP (0.300", 7.62mm)
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk IRFD110PBF
Helaian data :
IRFD110PBF.pdf
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CAP CER 7600PF 18KV SCREW. |
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