IRFH5302DTRPBF - MOSFET N-CH 30V 29A 8VQFN

Nombor Bahagian pengilang

IRFH5302DTRPBF

Nombor Bahagian dalaman

AX-IRFH5302DTRPBF

pengeluar

Infineon Technologies

Penerangan ringkas

MOSFET N-CH 30V 29A 8VQFN

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

486305 Pieces

Harga rujukan

~~USD 0.576924~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IRFH5302DTRPBF dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IRFH5302DTRPBF

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IRFH5302DTRPBF

pengeluar : Infineon Technologies

Penerangan : MOSFET N-CH 30V 29A 8VQFN

Siri : HEXFET®

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 30V

Semasa - Saliran berterusan (Id) @ 25 ° C : 29A (Ta), 100A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 2.5 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 100µA

Caj Gate (Qg) (Max) @ Vgs : 55nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3635pF @ 25V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 3.6W (Ta), 104W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : PQFN (5x6) Single Die

Pakej / Kes : 8-PowerVDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IRFH , IRFH530

dokumen untuk IRFH5302DTRPBF

Helaian data : IRFH5302DTRPBF.pdf

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