RN1962FE(TE85L,F) - TRANS 2NPN PREBIAS 0.1W ES6

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
TRANS 2NPN PREBIAS 0.1W ES6
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
31171 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai RN1962FE(TE85L,F) dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi RN1962FE(TE85L,F)

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : RN1962FE(TE85L,F)
pengeluar : Toshiba Semiconductor and Storage
Penerangan : TRANS 2NPN PREBIAS 0.1W ES6
Siri : -
Status Bahagian : Obsolete
Jenis Transistor : 2 NPN - Pre-Biased (Dual)
Pemungut Semasa (Ic) (Maks) : 100mA
Voltage - Breaker Pemungut Pemungut (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Rintangan - Pangkalan Penggabungan (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Semasa - Pemungut Cutoff (Max) : 100nA (ICBO)
Kekerapan - Peralihan : 250MHz
Kuasa - Maks : 100mW
Jenis Pemasangan : Surface Mount
Pakej / Kes : SOT-563, SOT-666
Pakej Peranti Pembekal : ES6
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : RN196 , RN1962FE

dokumen untuk RN1962FE(TE85L,F)

Helaian data : RN1962FE(TE85L,F).pdf

produk berkaitan untuk RN1962FE(TE85L,F) Toshiba Semiconductor and Storage

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