IPD80R600P7ATMA1 - MOSFET N-CH 800V 8A TO252-3

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
MOSFET N-CH 800V 8A TO252-3
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
559840 Pieces
Harga rujukan
USD 0.501144
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IPD80R600P7ATMA1 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi IPD80R600P7ATMA1

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : IPD80R600P7ATMA1
pengeluar : Infineon Technologies
Penerangan : MOSFET N-CH 800V 8A TO252-3
Siri : CoolMOS™ P7
Status Bahagian : Active
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 800V
Semasa - Saliran berterusan (Id) @ 25 ° C : 8A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 170µA
Caj Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 570pF @ 500V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 60W (Tc)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : PG-TO252-3
Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : IPD80 , IPD80R60

dokumen untuk IPD80R600P7ATMA1

Helaian data : IPD80R600P7ATMA1.pdf

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