IPD25CNE8N G - MOSFET N-CH 85V 35A TO252-3

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
MOSFET N-CH 85V 35A TO252-3
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
8336 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IPD25CNE8N G dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi IPD25CNE8N G

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : IPD25CNE8N G
pengeluar : Infineon Technologies
Penerangan : MOSFET N-CH 85V 35A TO252-3
Siri : OptiMOS™
Status Bahagian : Obsolete
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 85V
Semasa - Saliran berterusan (Id) @ 25 ° C : 35A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id : 4V @ 39µA
Caj Gate (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2070pF @ 40V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 71W (Tc)
Suhu Operasi : -55°C ~ 175°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : PG-TO252-3
Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : IPD2 , IPD25C

dokumen untuk IPD25CNE8N G

Helaian data : IPD25CNE8N G.pdf

produk berkaitan untuk IPD25CNE8N G Infineon Technologies

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