GP1M010A080FH - MOSFET N-CH 800V 9.5A TO220F

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
MOSFET N-CH 800V 9.5A TO220F
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
21152 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai GP1M010A080FH dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi GP1M010A080FH

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : GP1M010A080FH
pengeluar : Global Power Technologies Group
Penerangan : MOSFET N-CH 800V 9.5A TO220F
Siri : -
Status Bahagian : Obsolete
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 800V
Semasa - Saliran berterusan (Id) @ 25 ° C : 9.5A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.05 Ohm @ 4.75A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 53nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2336pF @ 25V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 48W (Tc)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Through Hole
Pakej Peranti Pembekal : TO-220F
Pakej / Kes : TO-220-3 Full Pack
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : GP1M , GP1M01

dokumen untuk GP1M010A080FH

Helaian data : GP1M010A080FH.pdf

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