AS4C8M16S-6BIN - IC DRAM 128M PARALLEL 54TFBGA

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
IC DRAM 128M PARALLEL 54TFBGA
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
62805 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai AS4C8M16S-6BIN dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi AS4C8M16S-6BIN

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : AS4C8M16S-6BIN
pengeluar : Alliance Memory, Inc.
Penerangan : IC DRAM 128M PARALLEL 54TFBGA
Siri : -
Status Bahagian : Obsolete
Jenis Memori : Volatile
Format Memori : DRAM
Teknologi : SDRAM
Saiz Memori : 128Mb (8M x 16)
Frekuensi Jam : 166MHz
Tulis Masa Kitar - Kata, Halaman : 2ns
Masa Capaian : 5ns
Antara Muka Memori : Parallel
Voltan - Bekalan : 3V ~ 3.6V
Suhu Operasi : -40°C ~ 85°C (TA)
Jenis Pemasangan : Surface Mount
Pakej / Kes : 54-TFBGA
Pakej Peranti Pembekal : 54-TFBGA (8x8)
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : AS4C , AS4C8M1

dokumen untuk AS4C8M16S-6BIN

Helaian data : AS4C8M16S-6BIN.pdf

produk berkaitan untuk AS4C8M16S-6BIN Alliance Memory, Inc.

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