SI2318CDS-T1-GE3 - MOSFET N-CH 40V 5.6A SOT-23

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N-CH 40V 5.6A SOT-23
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
3255630 Pieces
Harga rujukan
USD 0.086178
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SI2318CDS-T1-GE3 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi SI2318CDS-T1-GE3

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : SI2318CDS-T1-GE3
pengeluar : Vishay Siliconix
Penerangan : MOSFET N-CH 40V 5.6A SOT-23
Siri : TrenchFET®
Status Bahagian : Active
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 40V
Semasa - Saliran berterusan (Id) @ 25 ° C : 5.6A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 42 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 9nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 340pF @ 20V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 1.25W (Ta), 2.1W (Tc)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : SOT-23-3 (TO-236)
Pakej / Kes : TO-236-3, SC-59, SOT-23-3
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : SI231 , SI2318CD

dokumen untuk SI2318CDS-T1-GE3

Helaian data : SI2318CDS-T1-GE3.pdf

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