K4B4G0846E-BYMA - 4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
93390 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai K4B4G0846E-BYMA dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi K4B4G0846E-BYMA

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : K4B4G0846E-BYMA
pengeluar : Samsung Semiconductor
Penerangan : 4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
Siri : DDR3
Ketumpatan : 4 Gb
Org. : 512M x 8
kelajuan : 1866 Mbps
voltan : 1.35 V
Temp. : 0 ~ 85 °C
pakej : 78FBGA
Status produk : Mass Production
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : K4B4G , K4B4G08

dokumen untuk K4B4G0846E-BYMA

Helaian data : K4B4G0846E-BYMA.pdf

produk berkaitan untuk K4B4G0846E-BYMA Samsung Semiconductor

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