SI7964DP-T1-GE3 - MOSFET 2N-CH 60V 6.1A PPAK SO-8

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET 2N-CH 60V 6.1A PPAK SO-8
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
27916 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SI7964DP-T1-GE3 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi SI7964DP-T1-GE3

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : SI7964DP-T1-GE3
pengeluar : Vishay Siliconix
Penerangan : MOSFET 2N-CH 60V 6.1A PPAK SO-8
Siri : TrenchFET®
Status Bahagian : Obsolete
Jenis FET : 2 N-Channel (Dual)
Ciri FET : Standard
Salurkan ke Voltan Sumber (Vdss) : 60V
Semasa - Saliran berterusan (Id) @ 25 ° C : 6.1A
Rds On (Max) @ Id, Vgs : 23 mOhm @ 9.6A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Kuasa - Maks : 1.4W
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej / Kes : PowerPAK® SO-8 Dual
Pakej Peranti Pembekal : PowerPAK® SO-8 Dual
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : SI796 , SI7964D

dokumen untuk SI7964DP-T1-GE3

Helaian data : SI7964DP-T1-GE3.pdf

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