SI3424BDV-T1-GE3 - MOSFET N-CH 30V 8A 6TSOP

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N-CH 30V 8A 6TSOP
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
1918935 Pieces
Harga rujukan
USD 0.146208
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SI3424BDV-T1-GE3 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi SI3424BDV-T1-GE3

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : SI3424BDV-T1-GE3
pengeluar : Vishay Siliconix
Penerangan : MOSFET N-CH 30V 8A 6TSOP
Siri : TrenchFET®
Status Bahagian : Active
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 30V
Semasa - Saliran berterusan (Id) @ 25 ° C : 8A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 19.6nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 735pF @ 15V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 2.1W (Ta), 2.98W (Tc)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : 6-TSOP
Pakej / Kes : SOT-23-6 Thin, TSOT-23-6
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : SI342 , SI3424BD

dokumen untuk SI3424BDV-T1-GE3

Helaian data : SI3424BDV-T1-GE3.pdf

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