DMJ70H1D3SH3 - MOSFET BVDSS 651V 800V TO251

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
MOSFET BVDSS 651V 800V TO251
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
491595 Pieces
Harga rujukan
USD 0.57072
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai DMJ70H1D3SH3 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi DMJ70H1D3SH3

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : DMJ70H1D3SH3
pengeluar : Diodes Incorporated
Penerangan : MOSFET BVDSS 651V 800V TO251
Siri : -
Status Bahagian : Active
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 700V
Semasa - Saliran berterusan (Id) @ 25 ° C : 4.6A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.3 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 13.9nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 351pF @ 50V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 41W (Tc)
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Through Hole
Pakej Peranti Pembekal : TO-251
Pakej / Kes : TO-251-3 Stub Leads, IPak
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : DMJ7 , DMJ70H

dokumen untuk DMJ70H1D3SH3

Helaian data : DMJ70H1D3SH3.pdf

produk berkaitan untuk DMJ70H1D3SH3 Diodes Incorporated

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