MT47H128M4B6-3:D TR - IC DRAM 512M PARALLEL 60FBGA

Nombor Bahagian pengilang

MT47H128M4B6-3:D TR

Nombor Bahagian dalaman

AX-MT47H128M4B6-3:D TR

pengeluar

Micron Technology Inc.

Penerangan ringkas

IC DRAM 512M PARALLEL 60FBGA

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

23786 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai MT47H128M4B6-3:D TR dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi MT47H128M4B6-3:D TR

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : MT47H128M4B6-3:D TR

pengeluar : Micron Technology Inc.

Penerangan : IC DRAM 512M PARALLEL 60FBGA

Siri : -

Status Bahagian : Obsolete

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - DDR2

Saiz Memori : 512Mb (128M x 4)

Frekuensi Jam : 333MHz

Tulis Masa Kitar - Kata, Halaman : 15ns

Masa Capaian : 450ps

Antara Muka Memori : Parallel

Voltan - Bekalan : 1.7V ~ 1.9V

Suhu Operasi : 0°C ~ 85°C (TC)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 60-FBGA

Pakej Peranti Pembekal : 60-FBGA

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : MT47H1 , MT47H128M

dokumen untuk MT47H128M4B6-3:D TR

Helaian data : MT47H128M4B6-3:D TR.pdf

produk berkaitan untuk MT47H128M4B6-3:D TR Micron Technology Inc.

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PZ0140WL10136CB1	Vishay Beyschlag	CAP CER 100PF 16KV DISK.
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