RCD100N19TL - MOSFET N-CH 190V 10A CPT3

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N-CH 190V 10A CPT3
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
1012130 Pieces
Harga rujukan
USD 0.2772
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai RCD100N19TL dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
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spesifikasi bagi RCD100N19TL

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : RCD100N19TL
pengeluar : Rohm Semiconductor
Penerangan : MOSFET N-CH 190V 10A CPT3
Siri : -
Status Bahagian : Not For New Designs
Jenis FET : N-Channel
Teknologi : MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) : 190V
Semasa - Saliran berterusan (Id) @ 25 ° C : 10A (Tc)
Voltan Drive (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 182 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Caj Gate (Qg) (Max) @ Vgs : 52nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2000pF @ 25V
Ciri FET : -
Pemberlakuan Kuasa (Max) : 850mW (Ta), 20W (Tc)
Suhu Operasi : 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : CPT3
Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : RCD , RCD10

dokumen untuk RCD100N19TL

Helaian data : RCD100N19TL.pdf

produk berkaitan untuk RCD100N19TL Rohm Semiconductor

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