JAN1N6628US - DIODE GEN PURP 660V 1.75A D5B

Nombor Bahagian pengilang
Nombor Bahagian dalaman
Penerangan ringkas
DIODE GEN PURP 660V 1.75A D5B
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
30611 Pieces
Harga rujukan
USD 12.82644
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai JAN1N6628US dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi JAN1N6628US

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : JAN1N6628US
pengeluar : Microsemi Corporation
Penerangan : DIODE GEN PURP 660V 1.75A D5B
Siri : Military, MIL-PRF-19500/590
Status Bahagian : Active
Jenis Diod : Standard
Voltan - DC Reverse (Vr) (Max) : 660V
Semasa - Purata Rectified (Io) : 1.75A
Voltan - Teruskan (Vf) (Max) @ Jika : 1.35V @ 2A
Kelajuan : Fast Recovery =< 500ns, > 200mA (Io)
Masa Pemulihan Songsang (trr) : 30ns
Semasa - Kebocoran Songsang @ Vr : 2µA @ 660V
Kapasiti @ Vr, F : 40pF @ 10V, 1MHz
Jenis Pemasangan : Surface Mount
Pakej / Kes : E-MELF
Pakej Peranti Pembekal : D-5B
Suhu Pengoperasian - Persimpangan : -65°C ~ 150°C
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : JAN , JAN1N

dokumen untuk JAN1N6628US

Helaian data : JAN1N6628US.pdf

produk berkaitan untuk JAN1N6628US Microsemi Corporation

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