RQ3E180BNTB - MOSFET N-CHANNEL 30V 39A 8HSMT

Nombor Bahagian pengilang

RQ3E180BNTB

Nombor Bahagian dalaman

AX-RQ3E180BNTB

pengeluar

Rohm Semiconductor

Penerangan ringkas

MOSFET N-CHANNEL 30V 39A 8HSMT

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

2394295 Pieces

Harga rujukan

~~USD 0.11718~~

Harga kami

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AX Semiconductor mempunyai RQ3E180BNTB dalam stok untuk menjual.

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spesifikasi bagi RQ3E180BNTB

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : RQ3E180BNTB

pengeluar : Rohm Semiconductor

Penerangan : MOSFET N-CHANNEL 30V 39A 8HSMT

Siri : -

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 30V

Semasa - Saliran berterusan (Id) @ 25 ° C : 39A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 3.9 mOhm @ 18A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Caj Gate (Qg) (Max) @ Vgs : 37nC @ 4.5V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3500pF @ 15V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 2W (Ta), 20W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 8-HSMT (3.2x3)

Pakej / Kes : 8-PowerVDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : RQ3 , RQ3E1

dokumen untuk RQ3E180BNTB

Helaian data : RQ3E180BNTB.pdf

produk berkaitan untuk RQ3E180BNTB Rohm Semiconductor

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CDR32BP102BJZRAC	Vishay Vitramon	CAP CER 1000PF 100V BP 1206.
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