TPN1R603PL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Nombor Bahagian pengilang

TPN1R603PL,L1Q

Nombor Bahagian dalaman

AX-TPN1R603PL,L1Q

pengeluar

Toshiba Semiconductor and Storage

Penerangan ringkas

X35 PB-F POWER MOSFET TRANSISTOR

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

888305 Pieces

Harga rujukan

~~USD 0.31584~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai TPN1R603PL,L1Q dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi TPN1R603PL,L1Q

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : TPN1R603PL,L1Q

pengeluar : Toshiba Semiconductor and Storage

Penerangan : X35 PB-F POWER MOSFET TRANSISTOR

Siri : U-MOSIX-H

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 30V

Semasa - Saliran berterusan (Id) @ 25 ° C : 80A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.6 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 300µA

Caj Gate (Qg) (Max) @ Vgs : 41nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3900pF @ 15V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 104W (Tc)

Suhu Operasi : 175°C

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 8-TSON Advance (3.3x3.3)

Pakej / Kes : 8-PowerVDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : TPN1 , TPN1R60

dokumen untuk TPN1R603PL,L1Q

Helaian data : TPN1R603PL,L1Q.pdf

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