IPD35N10S3L26ATMA1 - MOSFET N-CH 100V 35A TO252-3

Nombor Bahagian pengilang

IPD35N10S3L26ATMA1

Nombor Bahagian dalaman

AX-IPD35N10S3L26ATMA1

pengeluar

Infineon Technologies

Penerangan ringkas

MOSFET N-CH 100V 35A TO252-3

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

991945 Pieces

Harga rujukan

~~USD 0.28284~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IPD35N10S3L26ATMA1 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IPD35N10S3L26ATMA1

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IPD35N10S3L26ATMA1

pengeluar : Infineon Technologies

Penerangan : MOSFET N-CH 100V 35A TO252-3

Siri : OptiMOS™

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 100V

Semasa - Saliran berterusan (Id) @ 25 ° C : 35A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 24 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 39µA

Caj Gate (Qg) (Max) @ Vgs : 39nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2700pF @ 25V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 71W (Tc)

Suhu Operasi : -55°C ~ 175°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : PG-TO252-3-11

Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IPD35N , IPD35N10S

dokumen untuk IPD35N10S3L26ATMA1

Helaian data : IPD35N10S3L26ATMA1.pdf

produk berkaitan untuk IPD35N10S3L26ATMA1 Infineon Technologies

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