SIHB12N65E-GE3 - MOSFET N-CH 650V 12A D2PAK
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N-CH 650V 12A D2PAK
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
140840 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai SIHB12N65E-GE3 dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi SIHB12N65E-GE3
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
SIHB12N65E-GE3
pengeluar :
Vishay Siliconix
Penerangan :
MOSFET N-CH 650V 12A D2PAK
Siri :
-
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
650V
Semasa - Saliran berterusan (Id) @ 25 ° C :
12A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1224pF @ 100V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
156W (Tc)
Suhu Operasi :
-55°C ~ 150°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
D²PAK (TO-263)
Pakej / Kes :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk SIHB12N65E-GE3
Helaian data :
SIHB12N65E-GE3.pdf
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