SQJ912BEP-T1_GE3 - MOSFET N-CH DUAL 40V PPSO-8L

Nombor Bahagian pengilang

SQJ912BEP-T1_GE3

Nombor Bahagian dalaman

AX-SQJ912BEP-T1_GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET N-CH DUAL 40V PPSO-8L

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

763795 Pieces

Harga rujukan

~~USD 0.367326~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SQJ912BEP-T1_GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SQJ912BEP-T1_GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SQJ912BEP-T1_GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET N-CH DUAL 40V PPSO-8L

Siri : Automotive, AEC-Q101, TrenchFET®

Status Bahagian : Active

Jenis FET : 2 N-Channel (Dual)

Ciri FET : Standard

Salurkan ke Voltan Sumber (Vdss) : 40V

Semasa - Saliran berterusan (Id) @ 25 ° C : 30A (Tc)

Rds On (Max) @ Id, Vgs : 11 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 60nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 25V

Kuasa - Maks : 48W (Tc)

Suhu Operasi : -55°C ~ 175°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej / Kes : PowerPAK® SO-8 Dual

Pakej Peranti Pembekal : PowerPAK® SO-8 Dual

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SQJ91 , SQJ912BE

dokumen untuk SQJ912BEP-T1_GE3

Helaian data : SQJ912BEP-T1_GE3.pdf

produk berkaitan untuk SQJ912BEP-T1_GE3 Vishay Siliconix

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