SI7960DP-T1-GE3 - MOSFET 2N-CH 60V 6.2A PPAK SO-8

Nombor Bahagian pengilang

SI7960DP-T1-GE3

Nombor Bahagian dalaman

AX-SI7960DP-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET 2N-CH 60V 6.2A PPAK SO-8

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

27363 Pieces

Harga rujukan

~~USD 0~~

Harga kami

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AX Semiconductor mempunyai SI7960DP-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI7960DP-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI7960DP-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET 2N-CH 60V 6.2A PPAK SO-8

Siri : TrenchFET®

Status Bahagian : Obsolete

Jenis FET : 2 N-Channel (Dual)

Ciri FET : Logic Level Gate

Salurkan ke Voltan Sumber (Vdss) : 60V

Semasa - Saliran berterusan (Id) @ 25 ° C : 6.2A

Rds On (Max) @ Id, Vgs : 21 mOhm @ 9.7A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 75nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : -

Kuasa - Maks : 1.4W

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej / Kes : PowerPAK® SO-8 Dual

Pakej Peranti Pembekal : PowerPAK® SO-8 Dual

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI796 , SI7960D

dokumen untuk SI7960DP-T1-GE3

Helaian data : SI7960DP-T1-GE3.pdf

produk berkaitan untuk SI7960DP-T1-GE3 Vishay Siliconix

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C0805C154KMREC	KEMET	CAP CER 0805 150NF 63V X7R 10.
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