SI3460BDV-T1-GE3 - MOSFET N-CH 20V 8A 6-TSOP

Nombor Bahagian pengilang

SI3460BDV-T1-GE3

Nombor Bahagian dalaman

AX-SI3460BDV-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET N-CH 20V 8A 6-TSOP

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

1199450 Pieces

Harga rujukan

~~USD 0.23391~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SI3460BDV-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI3460BDV-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI3460BDV-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET N-CH 20V 8A 6-TSOP

Siri : TrenchFET®

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 20V

Semasa - Saliran berterusan (Id) @ 25 ° C : 8A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 27 mOhm @ 5.1A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 24nC @ 8V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 860pF @ 10V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 2W (Ta), 3.5W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 6-TSOP

Pakej / Kes : SOT-23-6 Thin, TSOT-23-6

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI346 , SI3460BD

dokumen untuk SI3460BDV-T1-GE3

Helaian data : SI3460BDV-T1-GE3.pdf

produk berkaitan untuk SI3460BDV-T1-GE3 Vishay Siliconix

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WF165420WN10338BJ1	Vishay Beyschlag	CAP CER 10000PF 18KV SCREW.
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