SIA850DJ-T1-GE3 - MOSFET N-CH 190V 0.95A SC70-6

Nombor Bahagian pengilang

SIA850DJ-T1-GE3

Nombor Bahagian dalaman

AX-SIA850DJ-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET N-CH 190V 0.95A SC70-6

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

15832 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SIA850DJ-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SIA850DJ-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SIA850DJ-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET N-CH 190V 0.95A SC70-6

Siri : LITTLE FOOT®

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 190V

Semasa - Saliran berterusan (Id) @ 25 ° C : 950mA (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 3.8 Ohm @ 360mA, 4.5V

Vgs (th) (Max) @ Id : 1.4V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 4.5nC @ 10V

Vgs (Max) : ±16V

Input Capacitance (Ciss) (Max) @ Vds : 90pF @ 100V

Ciri FET : Schottky Diode (Isolated)

Pemberlakuan Kuasa (Max) : 1.9W (Ta), 7W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : PowerPAK® SC-70-6 Dual

Pakej / Kes : PowerPAK® SC-70-6 Dual

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SIA85 , SIA850D

dokumen untuk SIA850DJ-T1-GE3

Helaian data : SIA850DJ-T1-GE3.pdf

produk berkaitan untuk SIA850DJ-T1-GE3 Vishay Siliconix

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