EPC2012 - GANFET TRANS 200V 3A BUMPED DIE

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
GANFET TRANS 200V 3A BUMPED DIE
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
10072 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai EPC2012 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi EPC2012

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : EPC2012
pengeluar : EPC
Penerangan : GANFET TRANS 200V 3A BUMPED DIE
Siri : eGaN®
Status Bahagian : Discontinued at Digi-Key
Jenis FET : N-Channel
Teknologi : GaNFET (Gallium Nitride)
Salurkan ke Voltan Sumber (Vdss) : 200V
Semasa - Saliran berterusan (Id) @ 25 ° C : 3A (Ta)
Voltan Drive (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Caj Gate (Qg) (Max) @ Vgs : 1.8nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 145pF @ 100V
Ciri FET : -
Pemberlakuan Kuasa (Max) : -
Suhu Operasi : -40°C ~ 125°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej Peranti Pembekal : Die
Pakej / Kes : Die
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : EP , EPC

dokumen untuk EPC2012

Helaian data : EPC2012.pdf

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