IPB072N15N3GE8187ATMA1 - MOSFET N-CH 150V 100A TO263-3

Nombor Bahagian pengilang

IPB072N15N3GE8187ATMA1

Nombor Bahagian dalaman

AX-IPB072N15N3GE8187ATMA1

pengeluar

Infineon Technologies

Penerangan ringkas

MOSFET N-CH 150V 100A TO263-3

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

15672 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IPB072N15N3GE8187ATMA1 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IPB072N15N3GE8187ATMA1

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IPB072N15N3GE8187ATMA1

pengeluar : Infineon Technologies

Penerangan : MOSFET N-CH 150V 100A TO263-3

Siri : OptiMOS™

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 150V

Semasa - Saliran berterusan (Id) @ 25 ° C : 100A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 8V, 10V

Rds On (Max) @ Id, Vgs : 7.2 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 4V @ 270µA

Caj Gate (Qg) (Max) @ Vgs : 93nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 5470pF @ 75V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 300W (Tc)

Suhu Operasi : -55°C ~ 175°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : PG-TO263-3-2

Pakej / Kes : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IPB072N , IPB072N15N3

dokumen untuk IPB072N15N3GE8187ATMA1

Helaian data : IPB072N15N3GE8187ATMA1.pdf

produk berkaitan untuk IPB072N15N3GE8187ATMA1 Infineon Technologies

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