TPW1R306PL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Nombor Bahagian pengilang

TPW1R306PL,L1Q

Nombor Bahagian dalaman

AX-TPW1R306PL,L1Q

pengeluar

Toshiba Semiconductor and Storage

Penerangan ringkas

X35 PB-F POWER MOSFET TRANSISTOR

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

333995 Pieces

Harga rujukan

~~USD 0.84~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai TPW1R306PL,L1Q dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi TPW1R306PL,L1Q

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : TPW1R306PL,L1Q

pengeluar : Toshiba Semiconductor and Storage

Penerangan : X35 PB-F POWER MOSFET TRANSISTOR

Siri : U-MOSIX-H

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 60V

Semasa - Saliran berterusan (Id) @ 25 ° C : 260A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.29 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Caj Gate (Qg) (Max) @ Vgs : 91nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 8100pF @ 30V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 960mW (Ta), 170W (Tc)

Suhu Operasi : 175°C

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 8-DSOP Advance

Pakej / Kes : 8-PowerVDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : TPW1 , TPW1R30

dokumen untuk TPW1R306PL,L1Q

Helaian data : TPW1R306PL,L1Q.pdf

produk berkaitan untuk TPW1R306PL,L1Q Toshiba Semiconductor and Storage

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PEF220WP60238BK1	Vishay Beyschlag	CAP CER 6000PF 20KV R230 DISK.
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