IPD053N08N3GATMA1 - MOSFET N-CH 80V 90A TO252-3
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N-CH 80V 90A TO252-3
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
442375 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai IPD053N08N3GATMA1 dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi IPD053N08N3GATMA1
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
IPD053N08N3GATMA1
pengeluar :
Infineon Technologies
Penerangan :
MOSFET N-CH 80V 90A TO252-3
Siri :
OptiMOS™
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
80V
Semasa - Saliran berterusan (Id) @ 25 ° C :
90A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
5.3 mOhm @ 90A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 90µA
Caj Gate (Qg) (Max) @ Vgs :
69nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4750pF @ 40V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
150W (Tc)
Suhu Operasi :
-55°C ~ 175°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
PG-TO252-3
Pakej / Kes :
TO-252-3, DPak (2 Leads + Tab), SC-63
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk IPD053N08N3GATMA1
Helaian data :
IPD053N08N3GATMA1.pdf
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