IPP65R190E6XKSA1 - MOSFET N-CH 650V 20.2A TO220

Nombor Bahagian pengilang

IPP65R190E6XKSA1

Nombor Bahagian dalaman

AX-IPP65R190E6XKSA1

pengeluar

Infineon Technologies

Penerangan ringkas

MOSFET N-CH 650V 20.2A TO220

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

133600 Pieces

Harga rujukan

~~USD 2.1~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IPP65R190E6XKSA1 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IPP65R190E6XKSA1

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IPP65R190E6XKSA1

pengeluar : Infineon Technologies

Penerangan : MOSFET N-CH 650V 20.2A TO220

Siri : CoolMOS™

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 650V

Semasa - Saliran berterusan (Id) @ 25 ° C : 20.2A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 190 mOhm @ 7.3A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 730µA

Caj Gate (Qg) (Max) @ Vgs : 73nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1620pF @ 100V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 151W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Through Hole

Pakej Peranti Pembekal : PG-TO220-3

Pakej / Kes : TO-220-3

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IPP65 , IPP65R19

dokumen untuk IPP65R190E6XKSA1

Helaian data : IPP65R190E6XKSA1.pdf

produk berkaitan untuk IPP65R190E6XKSA1 Infineon Technologies

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