SI1988DH-T1-E3 - MOSFET 2N-CH 20V 1.3A SC70-6
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET 2N-CH 20V 1.3A SC70-6
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
32487 Pieces
Harga rujukan
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spesifikasi bagi SI1988DH-T1-E3
Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : SI1988DH-T1-E3
pengeluar : Vishay Siliconix
Penerangan : MOSFET 2N-CH 20V 1.3A SC70-6
Siri : TrenchFET®
Status Bahagian : Obsolete
Jenis FET : 2 N-Channel (Dual)
Ciri FET : Logic Level Gate
Salurkan ke Voltan Sumber (Vdss) : 20V
Semasa - Saliran berterusan (Id) @ 25 ° C : 1.3A
Rds On (Max) @ Id, Vgs : 168 mOhm @ 1.4A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 4.1nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds : 110pF @ 10V
Kuasa - Maks : 1.25W
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej / Kes : 6-TSSOP, SC-88, SOT-363
Pakej Peranti Pembekal : SC-70-6 (SOT-363)
Berat : -
Keadaan : Baru dan asli
dokumen untuk SI1988DH-T1-E3
Helaian data : SI1988DH-T1-E3.pdf
produk berkaitan untuk SI1988DH-T1-E3 Vishay Siliconix
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