AS4C16M16MSA-6BINTR - IC DRAM 256M PARALLEL 54FBGA

Nombor Bahagian pengilang

AS4C16M16MSA-6BINTR

Nombor Bahagian dalaman

AX-AS4C16M16MSA-6BINTR

pengeluar

Alliance Memory, Inc.

Penerangan ringkas

IC DRAM 256M PARALLEL 54FBGA

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

122385 Pieces

Harga rujukan

~~USD 2.548668~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai AS4C16M16MSA-6BINTR dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi AS4C16M16MSA-6BINTR

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : AS4C16M16MSA-6BINTR

pengeluar : Alliance Memory, Inc.

Penerangan : IC DRAM 256M PARALLEL 54FBGA

Siri : -

Status Bahagian : Active

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - Mobile SDRAM

Saiz Memori : 256Mb (16M x 16)

Frekuensi Jam : 166MHz

Tulis Masa Kitar - Kata, Halaman : -

Masa Capaian : 5.5ns

Antara Muka Memori : Parallel

Voltan - Bekalan : 1.7V ~ 1.95V

Suhu Operasi : -40°C ~ 85°C (TA)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 54-VFBGA

Pakej Peranti Pembekal : 54-FBGA (8x8)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : AS4C16 , AS4C16M16

dokumen untuk AS4C16M16MSA-6BINTR

Helaian data : AS4C16M16MSA-6BINTR.pdf

produk berkaitan untuk AS4C16M16MSA-6BINTR Alliance Memory, Inc.

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WF165335WL10338BJ1	Vishay Beyschlag	CAP CER 10000PF 16KV SCREW.
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PEF220BJ70238BK1	Vishay Beyschlag	CAP CER 7000PF 15KV R230 DISK.
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