IPD65R650CEATMA1 - MOSFET N-CH 650V 10.1A TO252

Nombor Bahagian pengilang

IPD65R650CEATMA1

Nombor Bahagian dalaman

AX-IPD65R650CEATMA1

pengeluar

Infineon Technologies

Penerangan ringkas

MOSFET N-CH 650V 10.1A TO252

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

23240 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IPD65R650CEATMA1 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IPD65R650CEATMA1

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IPD65R650CEATMA1

pengeluar : Infineon Technologies

Penerangan : MOSFET N-CH 650V 10.1A TO252

Siri : CoolMOS™

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 650V

Semasa - Saliran berterusan (Id) @ 25 ° C : 10.1A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 650 mOhm @ 2.1A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 0.21mA

Caj Gate (Qg) (Max) @ Vgs : 23nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 100V

Ciri FET : Super Junction

Pemberlakuan Kuasa (Max) : 86W (Tc)

Suhu Operasi : -40°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : PG-TO252-3

Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IPD65 , IPD65R65

dokumen untuk IPD65R650CEATMA1

Helaian data : IPD65R650CEATMA1.pdf

produk berkaitan untuk IPD65R650CEATMA1 Infineon Technologies

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