JAN1N5809URS - DIODE GEN PURP 100V 3A BPKG
Nombor Bahagian pengilang
Nombor Bahagian dalaman
AX-JAN1N5809URS
pengeluar
Penerangan ringkas
DIODE GEN PURP 100V 3A BPKG
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
33621 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai JAN1N5809URS dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi JAN1N5809URS
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
JAN1N5809URS
pengeluar :
Microsemi Corporation
Penerangan :
DIODE GEN PURP 100V 3A BPKG
Siri :
Military, MIL-PRF-19500/477
Status Bahagian :
Active
Jenis Diod :
Standard
Voltan - DC Reverse (Vr) (Max) :
100V
Semasa - Purata Rectified (Io) :
3A
Voltan - Teruskan (Vf) (Max) @ Jika :
875mV @ 4A
Kelajuan :
Fast Recovery =< 500ns, > 200mA (Io)
Masa Pemulihan Songsang (trr) :
30ns
Semasa - Kebocoran Songsang @ Vr :
5µA @ 100V
Kapasiti @ Vr, F :
60pF @ 10V, 1MHz
Jenis Pemasangan :
Surface Mount
Pakej / Kes :
SQ-MELF, B
Pakej Peranti Pembekal :
B, SQ-MELF
Suhu Pengoperasian - Persimpangan :
-65°C ~ 175°C
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk JAN1N5809URS
Helaian data :
JAN1N5809URS.pdf
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