FDM606P - MOSFET P-CH 20V 6.8A MICROFET

Nombor Bahagian pengilang

FDM606P

Nombor Bahagian dalaman

AX-FDM606P

pengeluar

ON Semiconductor

Penerangan ringkas

MOSFET P-CH 20V 6.8A MICROFET

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

69195 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai FDM606P dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi FDM606P

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : FDM606P

pengeluar : ON Semiconductor

Penerangan : MOSFET P-CH 20V 6.8A MICROFET

Siri : PowerTrench®

Status Bahagian : Obsolete

Jenis FET : P-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 20V

Semasa - Saliran berterusan (Id) @ 25 ° C : 6.8A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 30 mOhm @ 6.8A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 30nC @ 4.5V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 2200pF @ 10V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 1.92W (Ta)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 8-MLP, MicroFET (3x2)

Pakej / Kes : 8-SMD, Flat Lead Exposed Pad

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : FD , FDM

dokumen untuk FDM606P

Helaian data : FDM606P.pdf

produk berkaitan untuk FDM606P ON Semiconductor

Nombor Bahagian	jenama	Penerangan
WF125300BH10338BJ1	Vishay Beyschlag	CAP CER 10000PF 10KV SCREW.
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WI140316WQ75236BJ3	Vishay Beyschlag	CAP CER 7500PF 22.5KV SCREW.
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WX095162WJ25236BJ1	Vishay Beyschlag	CAP CER 2500PF 14KV SCREW.
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