SI5509DC-T1-GE3 - MOSFET N/P-CH 20V 6.1A 1206-8
Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N/P-CH 20V 6.1A 1206-8
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
27818 Pieces
Harga rujukan
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])
- AX Semiconductor mempunyai SI5509DC-T1-GE3 dalam stok untuk menjual.
- Pilihan penghantaran dan penghantaran masa:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Pilihan pembayaran:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasi bagi SI5509DC-T1-GE3
Jaminan kualiti :
jaminan 365 hari
Sumber saham :
Francais Pengedar / Pengilang Direct
Negara asal :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian :
SI5509DC-T1-GE3
pengeluar :
Vishay Siliconix
Penerangan :
MOSFET N/P-CH 20V 6.1A 1206-8
Siri :
TrenchFET®
Status Bahagian :
Obsolete
Jenis FET :
N and P-Channel
Ciri FET :
Logic Level Gate
Salurkan ke Voltan Sumber (Vdss) :
20V
Semasa - Saliran berterusan (Id) @ 25 ° C :
6.1A, 4.8A
Rds On (Max) @ Id, Vgs :
52 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
455pF @ 10V
Kuasa - Maks :
4.5W
Suhu Operasi :
-55°C ~ 150°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej / Kes :
8-SMD, Flat Lead
Pakej Peranti Pembekal :
1206-8 ChipFET™
Berat :
-
Keadaan :
Baru dan asli
dokumen untuk SI5509DC-T1-GE3
Helaian data :
SI5509DC-T1-GE3.pdf
produk berkaitan untuk SI5509DC-T1-GE3 Vishay Siliconix
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