IPB048N15N5LFATMA1 - MOSFET N-CH 150V 120A TO263-3

Nombor Bahagian pengilang

IPB048N15N5LFATMA1

Nombor Bahagian dalaman

AX-IPB048N15N5LFATMA1

pengeluar

Infineon Technologies

Penerangan ringkas

MOSFET N-CH 150V 120A TO263-3

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

100660 Pieces

Harga rujukan

~~USD 2.787138~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai IPB048N15N5LFATMA1 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IPB048N15N5LFATMA1

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IPB048N15N5LFATMA1

pengeluar : Infineon Technologies

Penerangan : MOSFET N-CH 150V 120A TO263-3

Siri : OptiMOS™-5

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 150V

Semasa - Saliran berterusan (Id) @ 25 ° C : 120A

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 4.9V @ 255µA

Caj Gate (Qg) (Max) @ Vgs : 84nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 75V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 313W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : D²PAK (TO-263AB)

Pakej / Kes : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IPB048 , IPB048N15

dokumen untuk IPB048N15N5LFATMA1

Helaian data : IPB048N15N5LFATMA1.pdf

produk berkaitan untuk IPB048N15N5LFATMA1 Infineon Technologies

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