SI5511DC-T1-GE3 - MOSFET N/P-CH 30V 4A 1206-8

Nombor Bahagian pengilang
Nombor Bahagian dalaman
pengeluar
Penerangan ringkas
MOSFET N/P-CH 30V 4A 1206-8
Rosh Status
Memimpin percuma / RoHS Compliant
Masa penghantaran
1-2 hari
kuantiti disediakan
29071 Pieces
Harga rujukan
USD 0
Harga kami
- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SI5511DC-T1-GE3 dalam stok untuk menjual.
Pilihan penghantaran dan penghantaran masa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Pilihan pembayaran:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasi bagi SI5511DC-T1-GE3

Jaminan kualiti : jaminan 365 hari
Sumber saham : Francais Pengedar / Pengilang Direct
Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nombor Bahagian : SI5511DC-T1-GE3
pengeluar : Vishay Siliconix
Penerangan : MOSFET N/P-CH 30V 4A 1206-8
Siri : TrenchFET®
Status Bahagian : Obsolete
Jenis FET : N and P-Channel
Ciri FET : Logic Level Gate
Salurkan ke Voltan Sumber (Vdss) : 30V
Semasa - Saliran berterusan (Id) @ 25 ° C : 4A, 3.6A
Rds On (Max) @ Id, Vgs : 55 mOhm @ 4.8A, 4.5V
Vgs (th) (Max) @ Id : 2V @ 250µA
Caj Gate (Qg) (Max) @ Vgs : 7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 435pF @ 15V
Kuasa - Maks : 3.1W, 2.6W
Suhu Operasi : -55°C ~ 150°C (TJ)
Jenis Pemasangan : Surface Mount
Pakej / Kes : 8-SMD, Flat Lead
Pakej Peranti Pembekal : 1206-8 ChipFET™
Berat : -
Keadaan : Baru dan asli
Pautan Berkaitan : SI551 , SI5511D

dokumen untuk SI5511DC-T1-GE3

Helaian data : SI5511DC-T1-GE3.pdf

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