DMN10H099SFG-7 - MOSFET N-CH 100V 4.2A PWRDI3333

Nombor Bahagian pengilang

DMN10H099SFG-7

Nombor Bahagian dalaman

AX-DMN10H099SFG-7

pengeluar

Diodes Incorporated

Penerangan ringkas

MOSFET N-CH 100V 4.2A PWRDI3333

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

1578790 Pieces

Harga rujukan

~~USD 0.177708~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai DMN10H099SFG-7 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi DMN10H099SFG-7

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : DMN10H099SFG-7

pengeluar : Diodes Incorporated

Penerangan : MOSFET N-CH 100V 4.2A PWRDI3333

Siri : -

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 100V

Semasa - Saliran berterusan (Id) @ 25 ° C : 4.2A (Ta)

Voltan Drive (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 80 mOhm @ 3.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 25.2nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1172pF @ 50V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 980mW (Ta)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : PowerDI3333-8

Pakej / Kes : 8-PowerWDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : DMN1 , DMN10H0

dokumen untuk DMN10H099SFG-7

Helaian data : DMN10H099SFG-7.pdf

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