BSZ086P03NS3EGATMA1 - MOSFET P-CH 30V 40A TSDSON-8

Nombor Bahagian pengilang

BSZ086P03NS3EGATMA1

Nombor Bahagian dalaman

AX-BSZ086P03NS3EGATMA1

pengeluar

Infineon Technologies

Penerangan ringkas

MOSFET P-CH 30V 40A TSDSON-8

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

1399470 Pieces

Harga rujukan

~~USD 0.200478~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai BSZ086P03NS3EGATMA1 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi BSZ086P03NS3EGATMA1

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : BSZ086P03NS3EGATMA1

pengeluar : Infineon Technologies

Penerangan : MOSFET P-CH 30V 40A TSDSON-8

Siri : OptiMOS™

Status Bahagian : Active

Jenis FET : P-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 30V

Semasa - Saliran berterusan (Id) @ 25 ° C : 13.5A (Ta), 40A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 8.6 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 3.1V @ 105µA

Caj Gate (Qg) (Max) @ Vgs : 57.5nC @ 10V

Vgs (Max) : ±25V

Input Capacitance (Ciss) (Max) @ Vds : 4785pF @ 15V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 2.1W (Ta), 69W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : PG-TSDSON-8

Pakej / Kes : 8-PowerTDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : BSZ086 , BSZ086P03

dokumen untuk BSZ086P03NS3EGATMA1

Helaian data : BSZ086P03NS3EGATMA1.pdf

produk berkaitan untuk BSZ086P03NS3EGATMA1 Infineon Technologies

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