SQ2361AEES-T1_GE3 - MOSFET P-CH 60V 2.5A SSOT23

Nombor Bahagian pengilang

SQ2361AEES-T1_GE3

Nombor Bahagian dalaman

AX-SQ2361AEES-T1_GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET P-CH 60V 2.5A SSOT23

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

1765950 Pieces

Harga rujukan

~~USD 0.158874~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

AX Semiconductor mempunyai SQ2361AEES-T1_GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SQ2361AEES-T1_GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SQ2361AEES-T1_GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET P-CH 60V 2.5A SSOT23

Siri : Automotive, AEC-Q101, TrenchFET®

Status Bahagian : Active

Jenis FET : P-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 60V

Semasa - Saliran berterusan (Id) @ 25 ° C : 2.8A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 170 mOhm @ 2.4A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 620pF @ 30V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 2W (Tc)

Suhu Operasi : -55°C ~ 175°C (TA)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : -

Pakej / Kes : TO-236-3, SC-59, SOT-23-3

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SQ236 , SQ2361AE

dokumen untuk SQ2361AEES-T1_GE3

Helaian data : SQ2361AEES-T1_GE3.pdf

produk berkaitan untuk SQ2361AEES-T1_GE3 Vishay Siliconix

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